Fano resonance of optical phonons in a multilayer graphene stack

We studied Fano interference between the Raman spectrum of G-band phonons and electron continuum in a multilayer graphene stack. The thickness power dependencies coefficient ∣1/q∣ G-mode, where q is asymmetry parameter, were spatially visualized analyzed using Gaussian-convoluted Breit–Wigner–Fano function. estimated decreases with an increase layer number laser low-power region at least for monolayer, bilayer, trilayer graphene. In higher-power region, increases only monolayer observed behaviors reflect phase difference signals from possibly originate changes electronic relaxation time Fermi level owing to heating sample.